2SC5585 / 2sc5663 transistors low frequency transistor (50v, 2a) 2SC5585 / 2sc5663 the transistor of 500ma class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. ! ! ! ! applications for switching for muting ! ! ! ! features 1) high current. 2) low v ce(sat) . v ce(sat) 250mv at i c = 200ma / i b = 10ma ! ! ! ! external dimensions (units : mm) rohm : emt3 eiaj : sc-75a jedec : sot-416 2SC5585 abbreviated symbol : bx abbreviated symbol : bx rohm : vmt3 2sc5663 (1) base (2) emitter (3) collector (1) emitter (2) base (3) collector 0.7 0.15 0.1min. 0.55 0~0.1 0.2 1.6 1.6 1.0 0.3 0.8 ( 2 ) 0.5 0.5 ( 3 ) 0.2 ( 1 ) 0~0.1 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.15max. 0.2 ( 2 ) ( 1 ) ! ! ! ! absolute maximum ratings (ta=25 c) parameter collectot-base voltage collector-emitter voltage collector current collector power dissipation junction temperature storage temperature v cbo v ceo i c p c tj tstg 15 v v ma mw c c 12 500 i cp a 1 ? 150 150 ? 55~+150 symbol limits unit ? single pulse pw = 1ms ! ! ! ! electrical characteristics (ta=25 c) parameter collector-base breakdown voltage collectoe-emitter brakdown voltage emitter-base breakdown voltage collector cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance symbol bv cbo bv ceo bv ebo i cbo h fe v ce (sat) cob min. 15 12 6 ? 270 ? ? ? ? ? ? ? 90 7.5 ? ? ? 100 680 250 ? vi c = 10 a i c = 1ma i e = 10 a v cb = 15v v ce = 2v, i c = 10ma i c /i b = 200ma/10ma v cb = 10v, i e = 0a, f = 1mhz v v na ? mv f t ? 320 ? v ce = 2v, i e = ? 10ma, f = 100mhz mhz pf typ. max. unit conditions
2SC5585 / 2sc5663 transistors ! ! ! ! packaging specifications package code taping basic ordering unit (pieces) h fe 2sc5663 2SC5585 t2l 8000 tl 3000 ? ? type ! ! ! ! electrical characteristic curves 0 1 10 base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics collector current : i c (ma) 100 0.5 1.0 1.5 v ce = 2v 1000 ta = 1 25 c 25 c -40 c 2 5 20 50 200 500 1 2 5 10 20 50 100 200 500 collector current : i c (ma) fig.2 dc current gain vs. collector current 10 dc current gain : h fe 1000 20 50 100 200 500 1000 ta = 1 25 c 5 2 1 v ce = 2v 25 c -40 c 1 2 5 10 20 50 100 200 i c / i b = 20 1 2 5 10 20 50 100 200 500 1000 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.3 collector-emitter saturation voltage vs. collector current ( ) ta = 1 25 c 500 1000 25 c -40 c 1 2 5 10 20 50 100 200 ta = 25 c 1 2 5 10 20 50 100 200 500 1000 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.4 collector-emitter saturation voltage vs. collector current ( ? ) i c / i b = 50 500 1000 20 10 10 20 50 100 200 500 1000 2000 i c / i b = 20 1 2 5 10 20 50 100 200 500 1000 collector saturation voltage : v be(sat) (mv) collector current : i c (ma) fig.5 base-emitter saturation voltage vs. collector current ta = -40 c 5000 10000 25 c 125 c 2 1 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 ta = 25 c v ce = 2v f t ( mh z ) collector to base voltage : v cb (v) fig.6 collector output capacitance emitter input capacitance vs. base voltage pulsed 0.2 0.1 0.5 1 2 5 10 20 50 100 1 2 5 10 20 50 100 200 500 1000 ta = 25 c i e = 0a f = 1mhz collector output capacitance : cob (pf) emitter input capacitance : cib (pf) emitter to base voltage : v eb (v) fig.7 collector output capacitance vs collector-base voltage emitter input capacitance vs emitter-base voltage cib cob
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